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Uncooled mid-wave infrared focal plane array using band gap engineered mercury cadmium telluride quantum dot coated silicon roic

Chatterjee, A and Pendyala, NB and Jagtap, A and Koteswara Rao, KSR (2019) Uncooled mid-wave infrared focal plane array using band gap engineered mercury cadmium telluride quantum dot coated silicon roic. In: e-Journal of Surface Science and Nanotechnology, 17 . pp. 95-100.

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Official URL: https://doi.org/10.1380/ejssnt.2019.95

Abstract

The dominant photon detectors and focal plane arrays (FPAs) in the mid-wave infrared (MWIR) range (λ = 3 μm to 5 μm) use single crystal InSb and HgCdTe materials. The cost of these detectors is high, and cooling at approximately 80 K to 120 K is required to reduce the dark current. Colloidal quantum dots (CQDs) can be used to provide the speed and detectivity (D*) of the quantum detectors with lower fabrication costs than those of single crystal epitaxial materials. The aim of this study is to develop a MWIR area array sensor with an HgCdTe-ternary alloyed semiconductor CQD using a commercially available silicon readout integrated circuit (ROIC). First, we synthesized a solution processed HgCdTe CQD responsive in the MWIR range at room temperature and developed a Schottkey junction photodiode array of 10 × 10 pixels based on the same quantum dots (QDs) to produce a HgCdTe-Si interface suitable for a MWIR photodiode at room temperature. After ensuring its functionality, we developed a 320 × 256-pixel focal plane array (FPA) responsive in the MWIR region by hybridization of the HgCdTe CQD layer over a silicon ROIC die with a direct injection input circuit. The FPA was operated using an indigenously developed Field Programmable Gate Array (FPGA)-based drive unit, and different IR targets were imaged to evaluate its use as a low-cost MWIR FPA. NEΔT value of 4 K achieved at room temperature.

Item Type: Journal Article
Publication: e-Journal of Surface Science and Nanotechnology
Publisher: The Japan Society of Vacuum and Surface Science
Additional Information: The copyright for this article belongs to the Authors.
Keywords: Cadmium telluride; Direct injection; Energy gap; Field programmable gate arrays (FPGA); Focal plane arrays; Focusing; II-VI semiconductors; III-V semiconductors; Indium antimonides; Mercury compounds; Nanocrystals; Narrow band gap semiconductors; Photodiodes; Photons; Semiconductor alloys; Semiconductor quantum dots; Silicon compounds; Single crystals; Sols, Alloyed semiconductors; Colloidal quantum dots; Epitaxial materials; HgCdTe; Mercury cadmium telluride; Mid wave infrared (MWIR); MWIR; Readout integrated circuits, Infrared radiation
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 11 Oct 2022 11:16
Last Modified: 11 Oct 2022 11:16
URI: https://eprints.iisc.ac.in/id/eprint/77373

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