Behera, M and Mishra, NC and Naik, R and Sripan, C and Ganesan, R (2019) Thermal annealing induced structural, optical and electrical properties change in As40Se60-xBix chalcogenide thin films. In: AIP Advances, 9 (9).
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Abstract
This work reports the formation of topological Bi2Se3 phase upon annealing higher of Bi content in amorphous As40Se60-xBix (x = 2, 7, 10 and 15) chalcogenide thin films prepared by thermal evaporation process. The phase identification was done by X-ray diffraction study and Field emission scanning electron microscopy studies confirm the phase transformation in As40Se45Bi15 thin film. The Raman measurements indicated the formation of crystalline As4Se4 and Bi2Se3 phase with annealing at 473K and the indirect optical band gap were found to decrease with increase in Bi concentration on thermal annealing as probed from the optical measurement. The changes in optical parameters were described on the basis of the density of localized states and the electrical resistance was found to be decreased which has been measured at room temperature by using the two-point probe technique.
| Item Type: | Journal Article |
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| Publication: | AIP Advances |
| Publisher: | American Institute of Physics Inc. |
| Additional Information: | The copyright for this article belongs to the Authors. |
| Keywords: | Annealing; Arsenic compounds; Chalcogenides; Energy gap; Field emission microscopes; Optical data processing; Phase transitions; Scanning electron microscopy; Thermal evaporation; Thin films, Chalcogenide thin films; Density of localized state; Electrical resistances; Field emission scanning electron microscopy; Optical and electrical properties; Phase identification; Thermal evaporation process; X-ray diffraction studies, Selenium compounds |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 12 Oct 2022 12:00 |
| Last Modified: | 12 Oct 2022 12:00 |
| URI: | https://eprints.iisc.ac.in/id/eprint/77361 |
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