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Many-Body Molecular Interactions in a Memristor

Rath, SP and Thompson, D and Goswami, S and Goswami, S (2022) Many-Body Molecular Interactions in a Memristor. In: Advanced Materials .

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Official URL: https://doi.org/10.1002/adma.202204551


Electronic transitions in molecular-circuit elements hinge on complex interactions between molecules and ions, offering a multidimensional parameter space to embed, access, and optimize material functionalities for target-specific applications. This opportunity is not cultivated in molecular memristors because their low-temperature charge transport, which is a route to decipher molecular many-body interactions, is unexplored. To address this, robust, temperature-resilient molecular memristors based on a Ru complex of an azo aromatic ligand are designed, and current–voltage sweep measurements from room temperature down to 2 K with different cooling protocols are performed. By freezing out or activating different components of supramolecular dynamics, the local Coulombic interactions between the molecules and counterions that affect the electronic transport can be controlled. Operating conditions are designed where functionalities spanning bipolar, unipolar, nonvolatile, and volatile memristors with sharp as well as gradual analog transitions are captured within a single device. A mathematical design space evolves, thereof comprising 36 tuneable parameters in which all possible steady-state functional variations in a memristor characteristic can be attainable. This enables a deterministic design route to engineer neuromorphic devices with unprecedented control over the transformation characteristics governing their functional flexibility and tunability.

Item Type: Journal Article
Publication: Advanced Materials
Publisher: John Wiley and Sons Inc
Additional Information: The copyright for this article belongs to John Wiley and Sons Inc.
Keywords: Ions; Molecular interactions; Molecular structure; Molecules; Ruthenium compounds; Temperature, Circuit elements; Counterions; Cryogenic transport; Electronic transition; Many body; Many-body molecular interaction; Memristor; Molecular circuits; Molecules and ions; Redox, Memristors
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 12 Oct 2022 11:37
Last Modified: 12 Oct 2022 11:37
URI: https://eprints.iisc.ac.in/id/eprint/77301

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