Metal Patterning via Arc Etching for Thin Film Electronics

Nair, AR and Sambandan, S (2022) Metal Patterning via Arc Etching for Thin Film Electronics. In: 2022 IEEE International Conference on Flexible and Printable Sensors and Systems, FLEPS 2022, 10 July 2022 13 July 2022, Vienna.

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Abstract

This paper discusses a novel technique for patterning metal thin film for thin film transistor applications. This is a roll to roll compatible patterning technique which involves the formation of an arc discharge between a metal electrode and the metal thin film. The arc discharge results in the etching of metal thin film in a very narrow region. Preliminary studies indicate the formation of etched regions having feature size as small as 30µm at an applied voltage of 100V. Further, a metal-semiconductor-metal structure is fabricated by patterning the metal using both the standard shadow mask method and the proposed arc etching method. A comparison between the current-voltage characteristics in both cases demonstrate the possibility of using arc etching as a source-drain patterning technique suitable for thin film transistors.

Item Type:	Conference Paper
Publication:	FLEPS 2022 - IEEE International Conference on Flexible and Printable Sensors and Systems, Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Current voltage characteristics; Drain current; Etching; Metals; Thin film circuits; Thin films, Arc discharge; C. thin film transistor (TFT); Metal patterning; Metal thin film; Novel techniques; Patterning techniques; Roll to Roll; Source-drain; Source-drain metal patterning; Thin film electronics, Thin film transistors
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	05 Oct 2022 09:28
Last Modified:	05 Oct 2022 09:28
URI:	https://eprints.iisc.ac.in/id/eprint/77058

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