Bound Exciton Induced Photoluminescence Linewidth Broadening in GaAs Quantum Wells

Srinivas, Vivek and Chen, Yung Jui and Wood, Colin EC (1994) Bound Exciton Induced Photoluminescence Linewidth Broadening in GaAs Quantum Wells. In: Solid State Communications, 89 (7). pp. 611-614.

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Abstract

The linewidth of the free exciton photoluminescence peak has been observed to broaden when the sample is excited by light whose energy exceeds the bandgap of the barrier. The net photoluminescence efficiency as well as the width of the free exciton line is observed to depend on the lattice temperature as well as the excitation wavelength and intensity. This is attributed to the scattering of free excitons by the charges trapped in the $Al_xGa _{1-x} As$ barrier.

Item Type:	Journal Article
Publication:	Solid State Communications
Publisher:	Elsevier
Additional Information:	Copyright of this article belongs to Elsevier.
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	23 Jun 2006
Last Modified:	19 Sep 2010 04:29
URI:	http://eprints.iisc.ac.in/id/eprint/7700

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