On ion transport during the electrochemical reaction on plane and GLAD deposited WO3 thin films

Naveen Kumar, K and Shaik, H and Chandrashekar, LN and Aishwarya, P and Abdul Sattar, S and Nithya, G and Madhavi, V and Imran Jafri, R and Gupta, J and Ashok Reddy, GV (2022) On ion transport during the electrochemical reaction on plane and GLAD deposited WO3 thin films. In: Materials Today: Proceedings, 59 . pp. 275-282.

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Abstract

Tungsten oxide thin films were deposited on FTO and Corning glass substrates on Plane and GLAD (75°) using DC magnetron sputtering and characterized using SEM, XRD, UV�Vis spectrophotometer, and Electrochemical analyzer systematically. Further, a comparative analysis was carried out in which it was observed that the result of surface morphology for plane showed the denser and GLAD showed nanopillars deposition. The amorphous nature of the sample was evident from XRD analysis. Optical transmittance was between 87 and 81 for both plane and GLAD. The Electrochemical studies showed the diffusion coefficient of H+ ions are more compared to Li+ ions for both plane and GLAD and Coloration efficiency was calculated at the scan rates of 10, 30, and 50 mV/s at the wavelength of 500 to 600 nm. © 2021

Item Type:	Journal Article
Publication:	Materials Today: Proceedings
Publisher:	Elsevier Ltd
Additional Information:	The copyright for this article belongs to the Elsevier Ltd.
Keywords:	Diffusion; Efficiency; Glass substrates; Ions; Morphology; Oxide films; Surface morphology; Thin films; X ray diffraction, Coloration efficiencies; Corning glass; Electrochemical reactions; GLAD; Ion-transport; Plane; Sputtering; Thin-films; Tungsten oxide (WO3); Tungsten oxide thin films, Tungsten compounds
Department/Centre:	Division of Interdisciplinary Sciences > Interdisciplinary Centre for Energy Research
Date Deposited:	21 Sep 2022 09:40
Last Modified:	21 Sep 2022 09:40
URI:	https://eprints.iisc.ac.in/id/eprint/76912

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