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20.2 GHz-µm fT–LG in InAlN/GaN-on-Si High Electron Mobility Transistors

Charan, VS and Muralidharan, R and Raghavan, S and Nath, DN (2022) 20.2 GHz-µm fT–LG in InAlN/GaN-on-Si High Electron Mobility Transistors. In: Physica Status Solidi (A) Applications and Materials Science .

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Official URL: https://doi.org/10.1002/pssa.202100858


Herein, InAlN/GaN-on-Si high-electron-mobility transistors (HEMTs) with an fT–LG product of 20.2 GHz–μm are demonstrated. The device with a gate length of 200 nm and a source–drain spacing of 900 nm exhibits a peak transconductance of 543 mS mm−1, an ION/IOFF ratio of ≈107, a maximum on-current of 2.4 A mm−1, and an on-resistance of 1.07 Ω mm. Small-signal characteristics show a unity current gain cutoff frequency of 101 GHz. Delay time analysis is performed to evaluate various delay components and their contribution to the small-signal performance of the device. An effective electron velocity of 1.56 × 107 cm s−1 is estimated in these devices, which minimizes the intrinsic delay of the transistor. The factors limiting the fT–LG product in deeply scaled devices are discussed using the delay analysis.

Item Type: Journal Article
Publication: Physica Status Solidi (A) Applications and Materials Science
Publisher: John Wiley and Sons Inc
Additional Information: The copyright for this article belongs to the John Wiley and Sons Inc.
Keywords: Aluminum compounds; Cutoff frequency; Drain current; Electron mobility; Electrons; Gallium nitride; Heterojunction bipolar transistors; III-V semiconductors; Indium compounds, Delay; Drain spacings; Effective electron velocity; Effective electrons; Electron velocity; F T; Gate-length; High electron-mobility transistors; InAlN/GaN; Source-drain, High electron mobility transistors
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 27 Sep 2022 07:23
Last Modified: 27 Sep 2022 07:23
URI: https://eprints.iisc.ac.in/id/eprint/76763

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