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Erbium-implanted materials for quantum communication applications

Stevenson, P and Phenicie, CM and Gray, I and Horvath, SP and Welinski, S and Ferrenti, AM and Ferrier, A and Goldner, P and Das, S and Ramesh, R and Cava, RJ and De Leon, NP and Thompson, JD (2022) Erbium-implanted materials for quantum communication applications. In: Physical Review B, 105 (22).

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Official URL: https://doi.org/10.1103/PhysRevB.105.224106


Erbium-doped materials can serve as spin-photon interfaces with optical transitions in the telecom C band, making them an exciting class of materials for long-distance quantum communication. However, the spin and optical coherence times of Er3+ ions are limited by currently available host materials, motivating the development of new Er3+-containing materials. Here we demonstrate the use of ion implantation to efficiently screen prospective host candidates, and show that disorder introduced by ion implantation can be mitigated through post-implantation thermal processing to achieve inhomogeneous linewidths comparable to bulk linewidths in as-grown samples. We present optical spectroscopy data for each host material, which allows us to determine the level structure of each site, allowing us to compare the environments of Er3+ introduced via implantation and via doping during growth. We demonstrate that implantation can generate a range of local environments for Er3+, including those observed in bulk-doped materials, and that the populations of these sites can be controlled with thermal processing. © 2022 American Physical Society.

Item Type: Journal Article
Publication: Physical Review B
Publisher: American Physical Society
Additional Information: The copyright for this article belongs to the author.
Keywords: C (programming language); Erbium; Erbium compounds; Ion implantation; Optical communication; Quantum communication; Sound insulating materials, C-bands; Coherence time; Communication application; Doped materials; Erbium doped; Host materials; Implanted materials; Ions implantation; Spin/photon interfaces; Telecom, Heat treatment
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 07 Sep 2022 16:04
Last Modified: 07 Sep 2022 16:04
URI: https://eprints.iisc.ac.in/id/eprint/76542

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