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Mechanistic insights into supersaturation mediated large area growth of hexagonal boron nitride for graphene electronics

Rao, A and Raghavan, S (2022) Mechanistic insights into supersaturation mediated large area growth of hexagonal boron nitride for graphene electronics. In: Journal of Materials Chemistry C, 10 (28). pp. 10412-10423.

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Official URL: https://doi.org/10.1039/d2tc01004f


Deposition of hexagonal boron nitride (h-BN) over large areas is an essential requirement for scaling electronic applications of 2D materials. Through an understanding of the physical chemistry of the popular ammonia-borane route, this work demonstrates control that can yield a range of deposits from isolated single crystal islands to polycrystalline monolayers with 15 micron islands to bulk multilayers. By constraining supersaturation both at the source and in the reactor, a five-orders-of-magnitude reduction in the unwanted nanocrystalline boron nitride (n-BN) density per μm2 has been achieved. Clean layers over 6 inch square areas and 4 inch wafer scale transfers prove scalability. The state-of-the-art mobility, 28 000 cm2 v−1 s−1, achieved by graphene transistors synthesized on these h-BN layers is a proof of their having met the substrate requirements of 2D electronics.

Item Type: Journal Article
Publication: Journal of Materials Chemistry C
Publisher: Royal Society of Chemistry
Additional Information: The copyright for this article belongs to the Royal Society of Chemistry.
Keywords: Ammonia; Boron nitride; Field effect transistors; Graphene; III-V semiconductors; Nitrides; Single crystals; Substrates; Supersaturation, Ammonia borane; Area growths; Crystal islands; Electronics applications; Magnitude reduction; Mechanistics; Nanocrystallines; Orders of magnitude; Polycrystalline; Scalings, Nanocrystals
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 03 Sep 2022 05:30
Last Modified: 03 Sep 2022 05:30
URI: https://eprints.iisc.ac.in/id/eprint/76405

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