Fracton Dimension of Porous Silicon as Determined by Low-Frequency Raman Scattering

Roy, Anushree and Sood, Ajay K (1995) Fracton Dimension of Porous Silicon as Determined by Low-Frequency Raman Scattering. In: Solid State Communications, 93 (12). pp. 995-998.

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Abstract

Porous silicon has been shown to have fractal morphology below a certain length scale. Using iow frequency Raman Scattering, we report the kacton dimension d which characterises the vibrational density of states. q(w)$\sim w^{(\v{d}-1)}$. of the fractal network. Taking the Hausdorff dimension D to be 2.5, the value of d obtained is equa1 to $1.42\pm.02,$ which is close to the theoretically predicted value of 4/3.

Item Type:	Journal Article
Publication:	Solid State Communications
Publisher:	Elsevier
Additional Information:	The copyright belongs to Elsevier.
Keywords:	A.nanoscructures;D.phonons;E.inelastic light scattering
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	14 Jun 2006
Last Modified:	19 Sep 2010 04:29
URI:	http://eprints.iisc.ac.in/id/eprint/7616

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