Microstructure Dependent Opto-Electronic Properties of Amorphous Hydrogenated Silicon Thin Films

Shaik, H and Sheik, AS and Rachith, SN and Rao, GM (2018) Microstructure Dependent Opto-Electronic Properties of Amorphous Hydrogenated Silicon Thin Films. In: International Conference on Advanced Materials and Applications (ICAMA) 2016, June 15 - 17, 2016, Bengaluru, Karanataka, INDIA, pp. 2527-2533.

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Abstract

The variation in the formation of amorphous hydrogenated silicon (a-Si:H) network in DC, pulsed DC (PDC) and RF sputtering was studied. The effect of network formation on the photo-electronic properties is investigated along with its applicability to the Continuous Random Network (CRN) model. It was found that DC deposited a-Si:H films obey the CRN model up to a hydrogen concentration (CH) ∼ 10 at.% H and there after it starts deviating. The deviation is more prominent for a-Si:H films deposited by PDC and RF sputtering. Also it was found that, DC sputtering is more suitable to deposit device grade a-Si:H rather than PDC and RF sputtering. Also DC deposited films are found to be of more photoactive compared to PDC and RF films. The domination of dihydrides (Si-H2) over monohydrides (Si-H) start at very low CH values in PDC and RF films, whereas, in DC deposited films it started at CH ∼13 at.% H. DC films are found to be of good quality as hydrogen is dominantly present in Si-H configuration. The effect of CH is considerably more on dark conductivity of a-Si:H films. The variation in band gap and photo conductivity is also investigated.

Item Type:	Conference Paper
Publication:	Materials Today: Proceedings
Publisher:	Elsevier Ltd
Additional Information:	The copyright for this article belongs to the Elsevier Ltd.
Keywords:	a-Si:H; amorphous silicon; continuous random network; hydrogen bonding configuration; hydrogen concentration; photoconductivity
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	22 Aug 2022 09:18
Last Modified:	22 Aug 2022 09:18
URI:	https://eprints.iisc.ac.in/id/eprint/76122

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