Anomalous Number Fluctuation Noise in Localized Transition Metal Dichalcogenide Layers: Generalization of McWhorter's Mechanism

Hsieh, K and Ghatak, S and Kochat, V and Zhang, X and Gong, Y and Tiwary, CS and Kaushal, S and Ajayan, PM and Ghosh, A (2018) Anomalous Number Fluctuation Noise in Localized Transition Metal Dichalcogenide Layers: Generalization of McWhorter's Mechanism. In: MRS Advances, 3 (6-7). pp. 299-305.

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Abstract

The mechanism of electrical noise in transition metal dichalcogenides (TMDCs) has mostly been attributed to charge carrier fluctuations between the oxide traps and the conducting channel, in accordance with the McWhorter model. However, the original McWhorter model was formulated for diffusive transport with conducting carriers having extended electronic wave functions. Our work serves to generalize the McWhorter mechanism to include strongly localized systems such as the TMDC family and provides an explanation for the unusual exponential behavior of noise magnitude with temperature.

Item Type:	Journal Article
Publication:	MRS Advances
Publisher:	Materials Research Society
Additional Information:	The copyright for this article belongs to the Materials Research Society.
Keywords:	Defects; Electric properties; Transition metal compounds; Wave functions, Conducting channels; Diffusive transport; Electronic wave functions; Exponential behaviors; Localized transition; Nano scale; Number fluctuations; Transition metal dichalcogenides, Transition metals
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering Division of Physical & Mathematical Sciences > Physics
Date Deposited:	24 Aug 2022 05:35
Last Modified:	24 Aug 2022 05:35
URI:	https://eprints.iisc.ac.in/id/eprint/76087

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