ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Analytical surface potential solution for low effective mass channel common double gate MOSFET

Chakraborty, AS and Jandhyala, S and Mahapatra, S (2018) Analytical surface potential solution for low effective mass channel common double gate MOSFET. In: 11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference, 13 - 16 May 2018, Anaheim, pp. 224-227.

[img] PDF
TechConnect_ATCWICE_4_224-227_2018.pdf - Published Version
Restricted to Registered users only

Download (1MB) | Request a copy
Official URL: https://briefs.techconnect.org/papers/analytical-s...


An accurate and computationally efficient analytical solution for the surface potential is essential to develop a compact model for a transistor. In this work we propose an algorithm to solve the implicit surface potential equation for low effective mass Common Double Gate (CDG) MOSFETs that significantly simplifies the implementation of their compact model. The algorithm needs a single iteration to compute accurate solution for the surface potential equation. Drain current, and capacitances calculated using the algorithm are found to be in good agreement with numerical device simulation for a wide range of channel thickness, effective mass, oxide thickness asymmetry, and bias voltages. The proposed algorithm is implemented in a standard circuit simulator through its Verilog-A interface and simulation of standard circuits like CMOS inverter, NAND gate, flip-flop etc is demonstrated.

Item Type: Conference Paper
Publication: TechConnect Briefs 2018 - Advanced Materials
Publisher: TechConnect
Additional Information: The copyright for this article belongs to the TechConnect.
Keywords: Algorithms; Capacitance; Circuit simulation; Drain current; Flip flop circuits; Iterative methods; Surface potential, Channel thickness; Circuit simulators; Computationally efficient; Double gate MOSFET; Numerical device simulation; Oxide thickness; Potential equation; Surface-potential solutions, MOSFET devices
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 27 Aug 2022 05:40
Last Modified: 27 Aug 2022 05:40
URI: https://eprints.iisc.ac.in/id/eprint/76038

Actions (login required)

View Item View Item