Electrical switching and thermal behavior of ternary Si15Te85-xBix (0 ≤ x ≤ 2) chalcogenide glasses

Jeevan Fernandes, B and Munga, P and Ramesh, K and Udayashankar, NK (2018) Electrical switching and thermal behavior of ternary Si15Te85-xBix (0 ≤ x ≤ 2) chalcogenide glasses. In: 2016 International Conference on Smart Engineering Materials, ICSEM 2016, 20 - 22 October 2016, Bengaluru, Karnataka, pp. 21292-21298.

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Abstract

Bulk semiconducting Si15Te85-xBix(0 ≤ x ≤ 2) chalcogenide glasses have been prepared using a well established melt-quenching technique. Electrical switching studies have been undertaken on Si15Te85-xBix(0 ≤ x ≤ 2) chalcogenide glasses. The results indicate that these samples exhibit memory type electrical switching behavior. It has been observed that the switching voltage VT of the glasses decreases with the addition of Bi. In addition, thermal stability and OFF state resistivity of the samples have been found to decrease with the increase in Bi concentration and are related to the observed decrease in switching voltages. The switching voltage (VT) has been found to increase with the thickness of the sample and decrease with increase in temperature confirming the thermal origin of the memory switching process. Further, scanning electron microscopy (SEM) studies reveal the formation of a crystalline channel indicating the conducting path between the two electrodes in the switched region.

Item Type:	Conference Paper
Publication:	Materials Today: Proceedings
Publisher:	Elsevier Ltd
Additional Information:	The copyright for this article belongs to the Elsevier Ltd.
Keywords:	chalcogenide glasses; electrical switching; scanning electron microscopy; thermal stability
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	19 Aug 2022 05:33
Last Modified:	19 Aug 2022 05:33
URI:	https://eprints.iisc.ac.in/id/eprint/75990

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