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Bilayer dielectrics for RRAM devices

Misra, D and Sultana, S and Jain, B and Bhat, N and Tapily, K and Clark, RD and Consiglio, S and Wajda, CS and Leusink, GJ (2018) Bilayer dielectrics for RRAM devices. In: Symposium on Semiconductors, Dielectrics, and Metal for Nanoelectronics 16 - AiMES 2018, ECS and SMEQ Joint International Meeting, 30 September - 4 October 2018, Cancun, pp. 77-83.

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Official URL: https://doi.org/10.1149/08602.0077ecst


To implement low power and highly reliable resistive randomaccess memory (RRAM) devices, suitable multi-layer dielectric materials are required. This consists of a switching layer, the oxygen vacancy medium, to form the filament and an oxygen vacancy deficient layer, such as Al2O3 to control the filament rupture. This work explores several different bilayer structures using different dielectrics, electrode materials and processing conditions to reduce power consumption during forming, set and reset operations and to enhance endurance with a large Roff/Ron value for RRAM application. Several transition metal dielectrics (HfAlO2 or HfZrO2) were used as the switching layer on a thin Al2O3. By comparing the forming voltage values, Roff/Ron values and both set and reset power consumption, optimized performance was derived.

Item Type: Conference Paper
Publication: ECS Transactions
Publisher: Electrochemical Society Inc.
Additional Information: The copyright for this article belongs to the Electrochemical Society Inc.
Keywords: Alumina; Aluminum oxide; Electric power utilization; Hafnium compounds; Oxygen; Oxygen vacancies; RRAM; Transition metals; Zirconium compounds, Bi-layer structure; Electrode material; Filament ruptures; Metal dielectrics; Multilayer dielectrics; Optimized performance; Processing condition; Resistive random-access memory, Dielectric materials
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 19 Aug 2022 05:18
Last Modified: 19 Aug 2022 05:18
URI: https://eprints.iisc.ac.in/id/eprint/75980

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