Growth of InSb epitaxial layers on GaAs (001) substrates by LPE and their characterizations

Dixit, VK and Rodrigues, BV and Bhat, HL and Venkataraghavan, R and Chandrasekaran, KS and Arora, BM (2002) Growth of InSb epitaxial layers on GaAs (001) substrates by LPE and their characterizations. In: Journal of Crystal Growth, 235 (1-4). pp. 154-160.

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Abstract

The growth of epitaxial InSb layers on highly lattice mismatched GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy. Details about nucleation, growth and optimization have been dealt with. High-resolution X-ray diffraction studies on the epilayers reveal all reflections with distinct layer and substrate peaks even up to a highest scattering angle of 153°. However, the layer peaks are considerably broader, indicating extensive dislocations. The average dislocation density was estimated from the Full-width at half-maximum of symmetric reflection. The grown films were n-type and the typical value of the sheet carrier density at 80 K obtained for these samples was $6.12\times10^{15}/cm^2$. The Hall mobility at 80 K was $7.058\times10^3\hspace{2mm}cm^2/Vs$. The room-temperature band gap was determined to be 0.198 eV. Raman scattering measurements have also been performed to characterize the grown epilayers.

Item Type:	Journal Article
Publication:	Journal of Crystal Growth
Publisher:	Elsevier
Additional Information:	Copyright of this article belongs to Elsevier.
Keywords:	A1. X-ray diffraction;A3. Liquid phase epitaxy;B1. Antimonides;B2. Semiconducting III–V materials
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	09 Jun 2006
Last Modified:	30 Jun 2011 11:53
URI:	http://eprints.iisc.ac.in/id/eprint/7566

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