New asymmetric atomistic model for the analysis of phase-engineered MoS2-gold top contact

Chakravarty, R and Saha, D and Mahapatra, S (2018) New asymmetric atomistic model for the analysis of phase-engineered MoS2-gold top contact. In: 31st International Conference on VLSI Design, VLSID 2018, 6 - 10 January 2018, Pune, pp. 139-142.

PDF IEEE_VLSID 2018_2018_139-142_2018.pdf - Published Version Restricted to Registered users only Download (456kB) | Request a copy

Abstract

Realizing low contact resistance at source/drain is one of the key challenges for obtaining high ON-current in 2D (two dimensional)-material channel based Metal-Oxide-Semiconductor transistors. In order to form ultra-low resistance contacts, the experimental techniques which involve inducing local metallic phases in the usual semiconducting MoS2 crystal, have attracted much attention. Howbeit, the density functional theory (DFT) based atomistic modeling of metal-2D material interface is important to get insights on the charge transfer through such systems, which is difficult to access by experiments. Though numerous studies have been reported for various semiconducting MoS2-metal interfaces, no such work exists for phase-engineered MoS2. In this work, firs twe compare the Schottky barrier height of both the systems, by analysing their electronic structures obtained via the DFT calculations. Next we propose a novel asymmetric Au-MoS2-Au atomistic model to assess the carrier transport and estimate the resistances offered by such hetero interfaces using non equilibrium Green's function (NEGF) formalism. Our study reveals almost a three-fold decrease in the resistance of the Au-1T'-Au device compared to that of the Au-2H-Au one.

Item Type:	Conference Paper
Publication:	Proceedings of the IEEE International Conference on VLSI Design
Publisher:	IEEE Computer Society
Additional Information:	The copyright for this article belongs to the IEEE Computer Society.
Keywords:	Charge transfer; Design for testability; Electronic structure; Embedded systems; Gold; Interfaces (materials); Layered semiconductors; Molybdenum compounds; MOS devices; Oxide semiconductors; Schottky barrier diodes; VLSI circuits, Atomistic modeling; Experimental techniques; Local density of state; Low-resistance contacts; Metal-oxide-semiconductor transistor; Non-equilibrium Green's function; Phase-engineered MoS2; Schottky barrier heights, Density functional theory
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	08 Aug 2022 09:20
Last Modified:	08 Aug 2022 09:20
URI:	https://eprints.iisc.ac.in/id/eprint/75609

Actions (login required)

View Item