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Low temperature synthesis of thin films of carbon nitride

Krishna, Ghanashyam M and Gunasekhar, KR and Mohan, S (1995) Low temperature synthesis of thin films of carbon nitride. In: Journal of Materials Research, 10 (5). pp. 1083-1085.

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Thin films of carbon nitride have been prepared using triode ion plating. It has been observed that the compound formation occurs at ambient substrate temperature itself. Though the films are completely amorphous at temperatures below 900 $^oC$, they are hard and transparent down to a wavelength of 200 nm. It has also been observed that the film transmission can be modulated using nitrogen ion flux and partial pressure. The IR transmission spectra clearly show the C-N stretch band around 2200 cm $^-^1$. Onset of crystallization, as evidenced from electron diffraction, occurs around 900 $^oC$ substrate temperature.

Item Type: Journal Article
Publication: Journal of Materials Research
Publisher: Materials Research Society
Additional Information: The copyright belongs to Materials Research Society.
Keywords: Ion plating;Optical properties;Thin film
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 11 Jun 2006
Last Modified: 27 Aug 2008 12:10
URI: http://eprints.iisc.ac.in/id/eprint/7558

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