Device Loss and Thermal Characteristics of High Power PWM Converters.

Siva Prasad, JS and Prasad, KNV and Narayanan, G (2019) Device Loss and Thermal Characteristics of High Power PWM Converters. In: 8th IEEE India International Conference on Power Electronics, IICPE 2018, 13 - 15 December 2018, Jaipur.

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Abstract

Thermal limit of a power electronic converter such as voltage source converter is essentially determined by the thermal limits of the individual devices such as insulated gated bipolar transistor (IGBT) and diode. Thermal limit of each device is its maximum junction temperature. The device junction temperature depends on the device loss and thermal equivalent circuit of the device. This paper attempts to correlate device loss and junction temperature on one hand with the operating conditions of the converter (i.e. kVA loading, power factor, dc bus voltage and switching frequency) on the other. The device loss characteristics and junction temperature characteristics are evaluated theoretically for a high-power pulse width modulated voltage source converter. The theoretical calculations are validated on a heat-run test set-up, consisting of two identical converters with circulating power arrangement.

Item Type:	Conference Paper
Publication:	India International Conference on Power Electronics, IICPE
Publisher:	IEEE Computer Society
Additional Information:	The copyright for this article belongs to IEEE Computer Society.
Keywords:	Equivalent circuits; Power electronics; Pulse width modulation, High power converters; Junction temperature characteristics; Junction temperatures; Power electronic converters; Theoretical calculations; Thermal characteristics; Thermal equivalent circuit; Voltage source converters, Power converters
Department/Centre:	Division of Electrical Sciences > Electrical Engineering
Date Deposited:	08 Aug 2022 05:03
Last Modified:	08 Aug 2022 05:03
URI:	https://eprints.iisc.ac.in/id/eprint/75471

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