RF and microwave dielectric response investigation of high-k yttrium copper titanate ceramic for electronic applications

Leo, A and Monteduro, AG and Rizzato, S and Ameer, Z and Lekshmi, IC and Hazarika, A and Choudhury, D and Sarma, DD and Maruccio, G (2018) RF and microwave dielectric response investigation of high-k yttrium copper titanate ceramic for electronic applications. In: Microelectronic Engineering, 194 . pp. 15-18.

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Abstract

The dielectric properties of YCTO bulk capacitors were investigated as a function of temperature from 25 °C to 150 °C and at microwave frequencies in comparison to a SiO2 bulk sample. The results confirm the high-k character of the YCTO ceramic, in addition to the low AC conductivity, namely ε′ = 40.1 and σ = 6 × 10−8 S cm−1 at 1 MHz, and show a weak frequency and temperature (25 °C–150 °C) dependence. A temperature coefficient value of −601 ppm°C−1 for the dielectric constant (TCε′) was estimated at 100 kHz. In the GHz regime, a comparison with bulk SiO2 confirms the higher YCTO dielectric permittivity. These results demonstrate high-k YCTO ceramic as a very promising material with high potentiality for electronic applications.

Item Type:	Journal Article
Publication:	Microelectronic Engineering
Publisher:	Elsevier B.V.
Additional Information:	The copyright for this article belongs to the Elsevier B.V.
Keywords:	Ceramic materials; Copper; Copper compounds; Dielectric properties; Low-k dielectric; Permittivity; Perturbation techniques; Silica; Temperature; Yttrium compounds, Cavity perturbation method; Dielectric characterization; Dielectric permittivities; Electronic application; High-k oxides; Microwave dielectric response; Rf/microwave; Temperature coefficient, High-k dielectric
Department/Centre:	Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited:	07 Aug 2022 09:15
Last Modified:	07 Aug 2022 09:15
URI:	https://eprints.iisc.ac.in/id/eprint/75456

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