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An atom-to-circuit modeling approach to all-2D metal–insulator–semiconductor field-effect transistors

Das, B and Mahapatra, S (2018) An atom-to-circuit modeling approach to all-2D metal–insulator–semiconductor field-effect transistors. In: npj 2D Materials and Applications, 2 (1).

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Official URL: https://doi.ord/10.1038/s41699-018-0073-3


Vertical stacking of heterogeneous two-dimensional (2D) materials has received considerable attention for nanoelectronic applications. In the semiconductor industry, however, the process of integration for any new material is expensive and complex. Thus, first principles-based models that enable systematic performance evaluation of emerging 2D materials at device and circuit level are in great demand. Here, we propose an ‘atom-to-circuit’ modeling framework for all-2D MISFET (metal–insulator–semiconductor field-effect transistor), which has recently been conceived by vertically stacking semiconducting transition metal dichalcogenide (e.g., MoS2), insulating hexagonal boron nitride and semi-metallic graphene. In a multi-scale modeling approach, we start with the development of a first principles-based atomistic model to study fundamental electronic properties and charge transfer at the atomic level. The energy band-structure obtained is then used to develop a physics-based compact device model to assess transistor characteristics. Finally, the models are implemented in a circuit simulator to facilitate design and simulation of integrated circuits. Since the proposed modeling framework translates atomic level phenomena (e.g., band-gap opening in graphene or introduction of semiconductor doping) to a circuit performance metric (e.g., frequency of a ring oscillator), it may provide solutions for the application and optimization of new materials.

Item Type: Journal Article
Publication: npj 2D Materials and Applications
Publisher: Nature Publishing Group
Additional Information: The copyright for this article belongs to the Authors.
Keywords: Atoms; Charge transfer; Circuit simulation; Electronic properties; Energy gap; Graphene; Graphene transistors; III-V semiconductors; Layered semiconductors; Metal insulator transition; Molybdenum compounds; Oscillators (electronic); Semiconductor device manufacture; Semiconductor doping; Timing circuits; Transition metals, Compact device modeling; Design and simulation; Hexagonal boron nitride; Nanoelectronic applications; Semiconducting transition; Semiconductor field-effect transistors; Semiconductor industry; Transistor characteristics, Field effect transistors
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 03 Aug 2022 11:47
Last Modified: 03 Aug 2022 11:47
URI: https://eprints.iisc.ac.in/id/eprint/75274

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