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Doped Cu 2 O/n-Si Heterojunction Solar Cell

Mukherjee, R and Srivastava, P and Ravindra, P and Avasthi, S (2018) Doped Cu 2 O/n-Si Heterojunction Solar Cell. In: 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, 10 - 15 June 2018, Waikoloa Village, pp. 2162-2165.

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Official URL: https://doi.org/10.1109/PVSC.2018.8547485


We present a silicon/oxide heterojunction solar cell using a doped-Cu 2 O electron blocking layer. Surface recombination velocity shows that doped-Cu 2 O provides better passivation for the surface defects in silicon than undoped Cu 2 O. More importantly, the built-in field at the Cu 2 O/Si interface is higher with the doped Cu 2 O. The higher field allows the doped-Cu 2 O/Si solar cells to attain an open-circuit voltage (VOC) of 0.45V, better than 0.32V previously reported 1. Integrating a transparent top electrode with the Cu 2 O/Si solar cells, reduces optical transmission losses and increases the short-circuit current density (JSC) from 14.3 mA/cm 2 to 17.9 mA/cm 2 . Overall doped-Cu 2 O/Si heterojunction solar cells show a power-conversion efficiency (PCE) of 5.23%.

Item Type: Conference Paper
Publication: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords: Copper oxides; Energy conversion; Heterojunctions; Light transmission; Open circuit voltage; Silicon compounds; Silicon oxides; Silicon solar cells; Surface defects; Transparent electrodes, Built-in fields; Electron blocking layer; Heterojunction solar cells; Photovoltaics; Power conversion efficiencies; Selective contacts; Surface recombination velocities, Solar cells
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 05 Aug 2022 05:57
Last Modified: 05 Aug 2022 05:57
URI: https://eprints.iisc.ac.in/id/eprint/75148

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