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Ozone-Treated Aluminum Doped Zinc Oxide for ETL-Free Stable Perovskite Solar Cells

Chouhan, AS and Jasti, NP and Avasthi, S (2018) Ozone-Treated Aluminum Doped Zinc Oxide for ETL-Free Stable Perovskite Solar Cells. In: 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, 10 - 15 June 2018, Waikoloa Village, pp. 1099-1102.

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Official URL: https://doi.org/10.1109/PVSC.2018.8548178


Aluminum doped zinc oxide (AZO) can function as effective electronic transport layer (ETL) cum transparent electrode for perovskite solar cells. Measured electronic band diagram shows that AZO/perovskite is a carrier-selective interface that blocks holes but allows transport of electrons. The performance of AZO/perovskite interface is significantly improved by exposing AZO surface to ozone. Ozone depletes carriers from top few nanometers of AZO, forming AZO/un-doped-AZO/perovskite interface with lower recombination losses, resulting in champion cell efficiency of 10.5 and open circuit voltage (Voc) up to 1.05V. AZO interface is also stable. Devices retained 90 of initial Voc even after 60 days of ambient storage.

Item Type: Conference Paper
Publication: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright for this article belongs to the IEEE.
Keywords: Aluminum oxide; Energy conversion; II-VI semiconductors; Interfaces (materials); Open circuit voltage; Optical films; Ozone; Ozone layer; Perovskite; Solar cells; Transparent conducting oxides; Transparent electrodes; Zinc oxide, Aluminum-doped zinc oxide; Ambient storage; Electronic band; Electronic transport; ETL-free; Ozone exposures; Recombination loss; Selective interfaces, Perovskite solar cells
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 04 Aug 2022 11:02
Last Modified: 04 Aug 2022 11:02
URI: https://eprints.iisc.ac.in/id/eprint/75144

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