Jadhav, S and Singh, B and Chandorkar, S and Pratap, R (2018) Optimization of platinum thin film as a bottom electrode for aluminum nitride thin films using Plackett-Burman statistical approach. In: 4th IEEE International Conference on Emerging Electronics, ICEE 2018, 17 - 19 December 2018, Bengaluru.
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Abstract
In this work, Plackett-Burman design is used to optimize platinum thin film sputtering parameters. The effect of different deposition parameters on Pt (111) rocking curve FWHM, residual stress and roughness of Pt film was studied. These substrate parameters are known to influence the quality of AlN deposited on it. It was concluded that most critical parameters deciding platinum film quality are power, annealing temperature, and deposition pressure. By identifying the most critical parameters, we narrowed our subsequent two-level factorial optimization domain by a factor of 16. Furthermore, based on the Plackett-Burman screening, the optimal values of non-critical process parameters can be set by a judicious choice that would yield best results for one of the features of film quality without adversely affecting the other features.
Item Type: | Conference Paper |
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Publication: | 2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018 |
Publisher: | Institute of Electrical and Electronics Engineers Inc. |
Additional Information: | The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc. |
Keywords: | Aluminum nitride; Analysis of variance (ANOVA); Deposition; Design of experiments; Electrodes; III-V semiconductors; Nitrides; Platinum; Sputtering, Aluminum nitride thin films; Annealing temperatures; Critical process parameters; Deposition Parameters; Deposition pressures; Metal electrodes; Plackett-Burman; Plackett-Burman designs, Thin films |
Department/Centre: | UG Programme Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering |
Date Deposited: | 30 Jul 2022 04:55 |
Last Modified: | 30 Jul 2022 04:55 |
URI: | https://eprints.iisc.ac.in/id/eprint/75082 |
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