Sahoo, K and Sen, P and Bhat, N (2018) Low Actuation Voltage Nano-Electro-Mechanical Switching Device for Ultra-Low Power Applications. In: 4th IEEE International Conference on Emerging Electronics, ICEE 2018, 17-19 December 2018, Bengaluru.
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Official URL: https://doi.org/10.1109/ICEE44586.2018.8938003
Abstract
In this paper we propose a two-terminal diode type nano-electro-mechanical (NEM) switch with a low actuation voltage of about 2.5 V and sharp subthreshold slope of ∼ 2.4 mV/decade obtained by reducing the air gap between electrodes. This type of switch will find applications in non-volatile memory, NEM resonators and sensors.
Item Type: | Conference Paper |
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Publication: | 2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018 |
Publisher: | Institute of Electrical and Electronics Engineers Inc. |
Additional Information: | The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc. |
Keywords: | Atomic layer deposition; Digital storage; Nanosensors; NEMS, Electro-mechanical; Low actuation voltage; Low Power; Low voltage switch; Non-volatile memory; Subthreshold slope; Two terminals; Ultralow power application, Electromechanical actuators |
Department/Centre: | Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering |
Date Deposited: | 30 Jul 2022 04:42 |
Last Modified: | 30 Jul 2022 04:42 |
URI: | https://eprints.iisc.ac.in/id/eprint/75076 |
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