SIMS characterization of TiN diffusion barrier layer on steel substrate

Kumar, P and Arvind, JM and Mohan, S and Avasthi, S (2018) SIMS characterization of TiN diffusion barrier layer on steel substrate. In: 4th IEEE International Conference on Emerging Electronics, ICEE 2018, 17 - 19 December 2018, Bengaluru.

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Abstract

Here we report experimentally determined diffusivity of Fe in TiN diffusion barrier layer. TiN films were deposited on mild steel substrates at room temperature. The samples were annealed at high temperatures in view of processes requiring high temperature such as GaAs thin film solar cells. SIMS was used to extract the diffusion coefficient for bulk diffusion and grain boundary diffusion. At 700°C, the effective diffusion coefficient was found to be 1.7 nm2/sec.

Item Type:	Conference Paper
Publication:	2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	Diffusion barriers; Gallium arsenide; Grain boundaries; III-V semiconductors; Secondary ion mass spectrometry; Substrates; Thin film solar cells; Titanium nitride, Bulk diffusions; Diffusion barrier layers; Effective diffusion coefficients; GaAs thin films; Grain-boundary diffusion; High temperature; Mild steel substrates; Steel substrate, Titanium alloys
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	29 Jul 2022 12:18
Last Modified:	29 Jul 2022 12:18
URI:	https://eprints.iisc.ac.in/id/eprint/75072

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