Investigation on Reduced Graphene Oxide for Radiation Sensing Application

Shruthi, G and Anshika, K and Baishali, G and Nella, N and Radhakrishna, V and Rajanna, K (2018) Investigation on Reduced Graphene Oxide for Radiation Sensing Application. In: 17th IEEE SENSORS Conference, SENSORS 2018, 28 October 2018-31 October 2018, New Delhi.

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Abstract

In this work, reduced graphene oxide in field effect transistor architecture has been explored for the detection of ionizing radiation. The reduced graphene oxide is prepared from Graphene oxide through thermal annealing at low temperature under vacuum environment. The technical approach is to utilize the sensitive dependence of the electrical conductivity of graphene-based compounds on a local electric field, which can be abruptly changed by the charge carriers produced by radiation absorbed in the underlying absorber material.

Item Type:	Conference Paper
Publication:	Proceedings of IEEE Sensors
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Architectural acoustics; Electric fields; Field effect transistors; Graphene transistors; Ionizing radiation; Raman spectroscopy; Scanning electron microscopy; Temperature, Absorber material; Electrical conductivity; Local electric field; Low temperatures; Radiation-sensing; Reduced graphene oxides; Thermal-annealing; Vacuum environment, Graphene
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	29 Jul 2022 11:15
Last Modified:	29 Jul 2022 11:15
URI:	https://eprints.iisc.ac.in/id/eprint/75048

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