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Trapping the carrier in the spin-locked MoS2atomic valley by absorption of chiral L-cysteine

Bhattacharya, S and Pal, S and Muthu, DVS and Sood, AK (2022) Trapping the carrier in the spin-locked MoS2atomic valley by absorption of chiral L-cysteine. In: AIP Advances, 12 (7).

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Official URL: https://doi.org/10.1063/5.0065333

Abstract

This work demonstrates enhanced valley contrasting spin-momentum locked chiral states at the van der Waals interface of chiral L-cysteine and single layer (SL) MoS2 placed on a Si/SiO2 substrate at ambient conditions. Helicity dependent photoluminescence and resonance Raman measurements highlight spin-locked transitions for the chiral L-cysteine modified SL-MoS2 at ambient conditions. Selective adsorption of chiral L-cysteine dimer/cysteine stabilizes the in-plane effective magnetic field due to the Si/SiO2 substrate and blocks the intervalley spin relaxation. The observed polarization efficiency can be useful for improving the functionality of valley-based light emitting diodes and encoding information in logical devices.

Item Type: Journal Article
Publication: AIP Advances
Publisher: American Institute of Physics Inc.
Additional Information: The copyright for this article belongs to the Authors.
Keywords: Interface states; Landforms; Layered semiconductors; Molybdenum compounds; Silicon; Van der Waals forces, Ambient conditions; Helicities; L-cysteine; Raman measurements; Resonance Raman; Selective adsorption; Si/SiO2; Single layer; Spin momentum; Van der Waal, Amino acids
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 27 Jul 2022 11:20
Last Modified: 27 Jul 2022 11:20
URI: https://eprints.iisc.ac.in/id/eprint/74995

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