Dielectric properties of La-modified antiferroelectric $PbZrO_3$ thin films

Bharadwaja, SSN and Saha, S and Bhattacharyya, S and Krupanidhi, SB (2002) Dielectric properties of La-modified antiferroelectric $PbZrO_3$ thin films. In: Materials Science and Engineering B, 88 (1). pp. 22-25.

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Abstract

Lead zirconate is a room temperature antiferroelectric material, which exhibits double polarization hysteresis characteristic in the presence of external field. A transformation from antiferroelectric to paraelectric behavior through a ferroelectric phase has been exhibited upon addition of La-to pure lead zirconate thin films, which were confirmed from dielectric, hysteresis and pyroelectric and micro Raman analyses. Thin films of pure and La-modified lead zirconate were processed using A-site vacancy formula $Pb_{(1 - 1.5x)}La_XZrO_3$ by pulsed excimer laser ablation technique. Pyroelectric coefficient increased gradually from 55 to 190 $\mu C cm^ - ^2 K^ - ^ 1$ with the addition of 0 to 9 mole% of La to pure lead zirconate. The transition temperature has been reduced to room temperature ($\sim$34 °C) with addition of a 9 mole% of La-to lead zirconate. Presence of antiferroelectricity in pure lead zirconate thin films is due to antiparallel shifts of Pb-ions in (110) direction and reduction of transition temperature is attributed to creation of A-site vacancies would have caused enhancing of ferro-and paraelectric behavior with La-addition.

Item Type:	Journal Article
Publication:	Materials Science and Engineering B
Publisher:	Elsevier
Additional Information:	Copyright of this article belongs to Elsevier.
Keywords:	Antiferroelectric lead zirconate;Micro Raman spectra and pyroelectric measurements;Thin films
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	02 Jun 2006
Last Modified:	19 Sep 2010 04:29
URI:	http://eprints.iisc.ac.in/id/eprint/7492

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