Venimadhav, A and Lekshmi, Chaitanya I and Hegde, MS (2002) Strain-induced Metallic Behavior in $PrNiO_3$ Epitaxial Thin Films. In: Materials Research Bulletin, 37 (2). pp. 201-208.
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Abstract
Electrical transport properties of $RniO_3$ (R=Pr, Nd, Sm) thin films grown by pulsed laser deposition have been studied. RNiO3 films grow in the (1 0 0) direction on a $LaAlO_3$ (1 0 0) substrate. Unlike the polycrystalline solid, $PrNiO_3$ films showed metallic behavior. The first-order metal-to-insulator transition observed in polycrystalline solids is suppressed in $RniO_3$ films. The effect of lattice strain in the films influencing the transport properties has been studied by varying the thickness of $PrNiO_3$ film on $LaAlO_3$ (1 0 0) and also by growing them on $SrTiO_3$ (1 0 0) and $\alpha-Al_2O_3 (1 \={1}02)$ substrates. Deviation in the transport properties is explained due to the strain-induced growth of the films. Further, we show that the transport property of a $LaNiO_3$ film is also influenced by a similar strain effect.
Item Type: | Journal Article |
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Publication: | Materials Research Bulletin |
Publisher: | Elsevier |
Additional Information: | Copyright of this article belongs to Elsevier. |
Keywords: | A. Thin films |
Department/Centre: | Division of Chemical Sciences > Solid State & Structural Chemistry Unit |
Date Deposited: | 02 Jun 2006 |
Last Modified: | 19 Sep 2010 04:28 |
URI: | http://eprints.iisc.ac.in/id/eprint/7482 |
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