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Room temperature giant magnetoresistance in half-metallic Cr2C based two-dimensional tunnel junctions

Das, S and Kabiraj, A and Mahapatra, S (2022) Room temperature giant magnetoresistance in half-metallic Cr2C based two-dimensional tunnel junctions. In: Nanoscale .

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Official URL: https://doi.org/10.1039/d2nr02056d


Two-dimensional (2D) magnetic materials inherit enormous potential to revolutionize next-generation spintronic technology. The majority of prior investigations using 2D ferromagnet-based tunnel junctions have shown encouraging tunnel magnetoresistance (TMR) at low temperatures. Using first-principles-based calculations, here we investigate the magnetic properties of commercially available Cr2C crystals at their monolayer limit and reveal their half metallicity properties far beyond room temperature. We then design hetero-multilayer structures combining Cr2C with graphene and hexagonal boron nitride (h-BN) and report their magnetoresistance using spin-polarized quantum transport calculations. While graphene based devices, adsorbed on the metal contact, reveal a very high TMR (1200), it can be further increased to 1500 by changing the barrier layer to h-BN. The dependence of TMR on the number of barrier layers and different metallic electrode materials (Ti, Ag, and Au) are also studied. Our investigation suggests that Cr2C based spin valves can serve as the perfect building blocks for room temperature all-2D spintronic devices.

Item Type: Journal Article
Publication: Nanoscale
Publisher: Royal Society of Chemistry
Additional Information: The copyright for this article belongs to the Royal Society of Chemistry.
Keywords: Boron nitride; Calculations; Chromium compounds; Giant magnetoresistance; Graphene; Graphene devices; III-V semiconductors; Magnetic materials; Metals; Monolayers; Nitrides; Spintronics; Tunnelling magnetoresistance, Barrier layers; Ferromagnets; First-principle-based-calculation; Half-metallic; Half-metallicity; Lows-temperatures; Multilayer structures; Property; Tunnel magnetoresistance; Two-dimensional, Tunnel junctions
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 15 Jul 2022 06:56
Last Modified: 15 Jul 2022 06:56
URI: https://eprints.iisc.ac.in/id/eprint/74431

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