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Effect of annealing and oxygen partial pressure on the RF sputtered WO3 thin films for electrochromic applications

Naveen Kumar, K and Shaik, H and Pawar, A and Chandrashekar, LN and Sattar, SA and Nithya, G and Imran Jafri, R and Madhavi, V and Gupta, J and Ashok Reddy, GV (2022) Effect of annealing and oxygen partial pressure on the RF sputtered WO3 thin films for electrochromic applications. In: Materials Today: Proceedings, 59 . pp. 339-344.

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Official URL: https://doi.org/10.1016/j.matpr.2021.11.185

Abstract

the electrochromic thin layer of Tungsten trioxide (WO3) was RF sputtered on FTO (fluorine-doped tin oxide) slide. In a reactive Ar + O2 gas environment with varying oxygen partial pressures, the deposition continued. The samples were air annealed at 400 °C for 2 h after being deposited at room temperature. SEM, XRD, UV–Visible spectrometer, and electrochemical analyzer characterization methods were employed to analyze the surface, structural morphology, optical, and electrochromic behaviour of the deposited material after annealing. The Optical Bandgap and Transmittance were found to be of a higher value for air annealed samples than RT deposited samples because RT deposited samples are amorphous whereas air annealed samples exhibit crystalline nature with Oxidation, reduction peak currents variation with respect to the temperature.

Item Type: Journal Article
Publication: Materials Today: Proceedings
Publisher: Elsevier Ltd
Additional Information: The copyright for this article belongs to the Elsevier Ltd.
Keywords: Annealing; Partial pressures; RF magnetron sputtering; Transmittance; Tungsten oxide (WO3)
Department/Centre: Division of Interdisciplinary Sciences > Interdisciplinary Centre for Energy Research
Date Deposited: 08 Jul 2022 06:27
Last Modified: 08 Jul 2022 06:27
URI: https://eprints.iisc.ac.in/id/eprint/74258

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