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Growth and Study of $SrBi_2\hspace{2mm}(Ta, Nb)_2\hspace{2mm}O_9$ thin films by pulsed excimer laser ablation

Bhattacharyya, S and Bharadwaja, SSN and Krupanidhi, SB (2000) Growth and Study of $SrBi_2\hspace{2mm}(Ta, Nb)_2\hspace{2mm}O_9$ thin films by pulsed excimer laser ablation. In: Solid State Communications, 114 (11). pp. 585-588.

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Thin films of $SrBi_2\hspace{2mm}(Ta,Nb)_2\hspace{2mm}O_9$ (SBTN) were grown using pulsed-laser ablation and were ex situ crystallized. Ferroelectric properties were achieved by low temperature deposition. A polycrystalline structure was achieved, with a Ta- to Nb-ratio nearly 1:1. The smaller thickness of the film allowed the switching voltage to be low enough (1.5 V), without affecting the insulating nature of the films. The hysteresis results showed an excellent square shaped loop with a remnant polarization $(P_r)$ of $7.6{\mu}C/cm^2$ and a coercive field $(E_c)$ of 75 kV/cm. This ferroelectric material composition is having a very high Curie temperature with higher stability and can be used in non-volatile random access memory (NVRAM) devices.

Item Type: Journal Article
Publication: Solid State Communications
Publisher: Elsevier
Additional Information: Copyright of this article belongs to Elsevier.
Keywords: A. Ferroelectrics;A. Thin films;B. Laser processing;D. Dielectric response
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 02 Jun 2006
Last Modified: 19 Sep 2010 04:28
URI: http://eprints.iisc.ac.in/id/eprint/7419

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