Effect of Source & Drain Side Abutting on the Low Current Filamentation in LDMOS-SCR Devices

Monishmurali, M and Kranthi, NK and Boselli, G and Shrivastava, M (2022) Effect of Source & Drain Side Abutting on the Low Current Filamentation in LDMOS-SCR Devices. In: 2022 IEEE International Reliability Physics Symposium, IRPS 2022, 27 March 2022 through 31 March 2022, Dallas, 6C11-6C16.

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Abstract

The concept of abutting source/body and drain/anode junctions is studied in detail in a high voltage LDMOS-SCR with 2D and 3D TCAD simulations. The SCR turn-on and low current filament formation are strongly influenced by the isolation at the anode and cathode side in the LDMOS-SCR. While the anode side isolation impacts the filament-induced failures at low currents, the cathode side isolation has a minor impact. Physical insights are given on the SCR turn-on degradation with abutting and its influence on the filament formation and spreading. The obtained understanding helps to build an ESD robust, self-protected LDMOS-SCRs.

Item Type:	Conference Paper
Publication:	IEEE International Reliability Physics Symposium Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	Anodes; Cathodes; Drain current, Anode junction; Current filamentation; Current filaments; Filament formation; High-voltages; Low currents; On currents; On-currents; Source-drain; TCAD simulation, MOS devices
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	05 Jul 2022 11:45
Last Modified:	05 Jul 2022 11:45
URI:	https://eprints.iisc.ac.in/id/eprint/74152

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