HV-LDMOS Device Engineering Insights for Moving Current Filament to Enhance ESD Robustness

Kranthi, NK and Boselli, G and Shrivastava, M (2022) HV-LDMOS Device Engineering Insights for Moving Current Filament to Enhance ESD Robustness. In: IEEE Transactions on Electron Devices, 69 (3). pp. 1242-1250.

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Abstract

In this article, a novel design approach for improving electrostatic discharge (ESD) robustness of high-voltage laterally double-diffused MOS (LDMOS) devices is presented using detailed 3-D TCAD simulations. The proposed method considers engineering both static filament and dynamic/moving current filaments in LDMOS design. Physical insights and engineering approaches for moving filaments at higher stress current levels are presented. Dynamic filament motion and its relation to n-p-n turn-on engineering with an optimum p-well profile and substrate biasing are revealed. A unique window failure in LDMOS near snapback is discussed for the first time. A detailed analysis is presented on filament width engineering by using optimum drain diffusion length (DL) and its influence on static filament-induced window failures. This approach resulted in ten-time improvement in ESD robustness for self-protecting concepts. Finally, different fundamental questions related to the origin of filament motion are explored (using 3-D TCAD) with the help of engineered LDMOS Designs.

Item Type:	Journal Article
Publication:	IEEE Transactions on Electron Devices
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	Dynamics; Electrostatic devices; Electrostatics; MOS devices, Current filaments; Device engineering; Electrostatic discharge; Laterally double-diffused MOS .; Lattice; MOS design; Moving current filament; Robustness; Window failures, Substrates
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	30 Jun 2022 05:40
Last Modified:	30 Jun 2022 05:40
URI:	https://eprints.iisc.ac.in/id/eprint/73798

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