Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control over the 2-DEG

Dutta Gupta, S and Joshi, V and Chaudhuri, RR and Shrivastava, M (2022) Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control over the 2-DEG. In: IEEE Transactions on Electron Devices, 69 (3). pp. 1608-1611.

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Abstract

This work reports a unique gate bias dependence of dynamic ON-resistance in metal-insulator-semiconductor (MIS)-gated AlGaN/GaN high-electron-mobility transistors (HEMTs). The absence of such dependence in Schottky HEMTs confirms that the phenomenon is unique to MISHEMTs. Based on the observations, the weakening of gate control over GaN channel by the insertion of the gate insulator is proposed as the phenomenon responsible for the observed behavior. The proposal is verified by incorporating high- κ (25) \text Al0.5\text Ti0.5\text Oy as the gate oxide, which successfully mitigated the gate bias dependence of dynamic ON-resistance by improving the gate control.

Item Type:	Journal Article
Publication:	IEEE Transactions on Electron Devices
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	Aluminum gallium nitride; Electron mobility; Energy gap; Gallium nitride; High electron mobility transistors; Metal insulator boundaries; MIS devices; Semiconductor insulator boundaries; Wide band gap semiconductors, AlGaN/GaN high electron mobility transistors; AlGaN/GaN high-electron-mobility transistor; Dynamic on-resistance; Gate-leakage; High electron-mobility transistors; High-κ; Metal-insulator-semiconductor high-electron-mobility transistor .; Metal-insulator-semiconductors; On-resistance; Wide-band-gap semiconductor, III-V semiconductors
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	30 Jun 2022 05:37
Last Modified:	30 Jun 2022 05:37
URI:	https://eprints.iisc.ac.in/id/eprint/73795

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