ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Effect of SnS thin film thickness on visible light photo detection

Alagarasan, D and Hegde, SS and Varadharajaperumal, S and Aadhavan, R and Naik, R and Shkir, M and Algarni, H and Ganesan, R (2022) Effect of SnS thin film thickness on visible light photo detection. In: Physica Scripta, 97 (6).

[img] PDF
phy_scr_97-6_2022.pdf - Published Version
Restricted to Registered users only

Download (1MB) | Request a copy
Official URL: https://doi.org/10.1088/1402-4896/ac6d19


In this study, SnS thin films of various thicknesses (500 nm-700 nm) were prepared by the thermal evaporation technique for potential photodetector application. High purity SnS prepared at 1000 °C is used to deposit thin films at room temperature. The prepared SnS thin films were characterized to assess the thickness effect on the crystallite size, morphology, transmittance, band gap, and photo-sensing properties. SnS pure phase confirmed through XRD and Raman spectral analysis. Among the fabricated SnS thin films, the sample having a thickness of 650 nm showed better crystallinity with higher crystallite size and preferred orientation of crystallites. SnS grew plate-like-columnar grain morphology of different widths and thicknesses which is confirmed by FESEM results. The UV-Vis studies showed a minimum band gap value obtained for 650 nm thickness film. The 650 nm thickness SnS films have a highest photo response of 6.72 × 10-1 AW-1, external quantum efficiency (EQE) of 157%, and detectivity of 14.2 × 109 Jones. The transient photo-response analysis showed the 650 nm SnS thin film has a 5.3 s rise and 5.1 s fall duration, which is better suitable for photodetector applications compared to other samples.

Item Type: Journal Article
Publication: Physica Scripta
Publisher: Institute of Physics
Additional Information: The copyright for this article belongs to the Institute of Physics.
Keywords: Crystallinity; Crystallite size; Energy gap; Film preparation; Film thickness; IV-VI semiconductors; Layered semiconductors; Morphology; Photons; Semiconducting tin compounds; Spectrum analysis; Thermal evaporation; Thin films, High purity; I-V characteristic; Photo detection; Photo-detectors; Photoresponses; Responsivity; SnS thin films; Thermal evaporation technique; Thin films-thickness; Visible light, Photodetectors
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 21 Jun 2022 05:22
Last Modified: 21 Jun 2022 05:22
URI: https://eprints.iisc.ac.in/id/eprint/73601

Actions (login required)

View Item View Item