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Evaluation of on-state resistance in gallium nitride based power electronic switches

Badal, Ashutosh and Narayanan, G and Muralidharan, R (2017) Evaluation of on-state resistance in gallium nitride based power electronic switches. In: 2017 IEEE International Conference on Signal Processing, Informatics, Communication and Energy Systems, SPICES 2017, 8 - 10 August 2017, Kollam, pp. 1-6.

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Official URL: https://doi.org/10.1109/SPICES.2017.8091359


Gallium nitride (GaN) based high-electron-mobility transistor (HEMT) is getting popular in power electronics applications due to its low on-state resistance and superior switching characteristics. The on-state resistance of the switch is an important factor in the efficiency of the GaN switch based power converter. Firstly, the basic principle of operation of a normally-on GaN/AlGaN HEMT is reviewed. Then parallelization of several basic HEMT units internally to form a multi-finger-structured GaN device to achieve high current rating is illustrated. Later, estimation of the on-state resistance of a given device based on its internal structure and composition is attempted. Further, the variations in on-resistance with thickness of metalization of drain and source pads, length of the drain and source fingers, and the sheet resistance of two-dimensional electron gas (2DEG) are studied. This study on on-state resistance is used to provide architecture-level inputs to the design of a multi-finger GaN device for power electronics applications.

Item Type: Conference Paper
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords: Device modelling; gallium nitride (GaN) transistors; high-electron-mobility transistor (HEMT); on-state resistance; power semiconductor devices; power switching transistors
Department/Centre: Division of Electrical Sciences > Electrical Engineering
Date Deposited: 13 Jun 2022 11:50
Last Modified: 13 Jun 2022 11:50
URI: https://eprints.iisc.ac.in/id/eprint/73398

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