Reverse recovery characteristics of the IGBT anti-parallel diode with variation in operating conditions: An experimental study

Das, Subhas Chandra and Narayanan, G (2017) Reverse recovery characteristics of the IGBT anti-parallel diode with variation in operating conditions: An experimental study. In: In this paper the focus is to study the switching characteristic of antiparallel diode in an IGBT module. The switching characteristic parameters reverse recovery time, peak reverse recovery current and corresponding energy loss during the diode turn-off, 17-19 November 2016, Patiala, India, pp. 1-5.

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Abstract

In this paper the focus is to study the switching characteristic of antiparallel diode in an IGBT module. The switching characteristic parameters reverse recovery time, peak reverse recovery current and corresponding energy loss during the diode turn-off transition are studied experimentally. The relationship of these characteristic parameters with the operating conditions, namely, switching voltage, device current and junction temperature is presented. This experimental study enables to decide the right diode characteristic and precise determination of device switching loss with the knowledge of IGBT switching characteristics.

Item Type:	Conference Paper
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The Copyright of this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	freewheeling diode; Insulated-Gate Bipolar Transistor (IGBT); power converters; pulse width modulated inverter; reverse recovery current; reverse recovery loss; reverse recovery time; Diodes; Energy dissipation; Power converters; Power electronics; Recovery; Switching; Freewheeling diodes; Pulse-width-modulated inverter; Reverse recovery; Reverse recovery current; Reverse recovery time; Insulated gate bipolar transistors (IGBT)
Department/Centre:	Division of Electrical Sciences > Electrical Engineering
Date Deposited:	11 Jun 2022 09:07
Last Modified:	11 Jun 2022 09:07
URI:	https://eprints.iisc.ac.in/id/eprint/73257

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