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Influence of dopant gases PH3 and B2H6 on properties of Borosilicate, Phosphosilicate, and Borophosphosilicate glass deposited using TEOS by LPCVD

Pavithra, S and Raghupathy, Raghupathy and Suresh, Madhuri and Savitha, P (2017) Influence of dopant gases PH3 and B2H6 on properties of Borosilicate, Phosphosilicate, and Borophosphosilicate glass deposited using TEOS by LPCVD. In: 3rd International Conference on Emerging Electronics, ICEE 2016, 27-30 December 2016, Mumbai, pp. 1-3.

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Official URL: https://doi.org/10.1109/ICEmElec.2016.8074634

Abstract

Borosilicate (BSG), Phosphosilicate (PSG) and Borophosphosilicate (BPSG) films were deposited using TEOS by low pressure chemical vapor deposition. The effect of dopant gases PH3 and B2H6 on properties of the films were studied by varying their flow rates from 0 to 25 sccm keeping the temperature, pressure, TEOS bubbler conditions and deposition duration constant. Deviations in the deposition rate, surface roughness and stress were investigated taking TEOS SiO2 films as the reference. It can be seen that both the dopant gases affect the deposition rates of the films deposited with a more pronounced effect in the case of PH3. Stress and surface roughness of the deposited PSG, BSG and BPSG films were lower than that of SiO2 films deposited using TEOS.

Item Type: Conference Paper
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords: BPSG; Roughness; Stress; TEOS
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 07 Jun 2022 05:56
Last Modified: 07 Jun 2022 05:56
URI: https://eprints.iisc.ac.in/id/eprint/73229

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