Epitaxial germanium thin films on silicon (100) using two-step process

Chaurasia, Saloni and Raghavan, Srinivasan and Avasthi, Sushobhan (2017) Epitaxial germanium thin films on silicon (100) using two-step process. In: 3rd International Conference on Emerging Electronics, ICEE 2016, 27-30 December 2016, Mumbai, pp. 1-4.

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Abstract

A two-step growth method for high-quality epitaxial germanium films on silicon (100) is presented. During the first step a seed layer of crystalline Ge is deposited on silicon. The seed layer is a 50-100 nm germanium thin-film crystallized by melting amorphous germanium deposited using PECVD. During the second step germanium is epitaxially deposited on top of the re-crystallized seed layer using LPCVD at 600 °C. Scanning electron microscopy (SEM) reveal that the resulting germanium films are continuous, conformal and crack-free. X ray diffraction (XRD) pattern in the θ-2θ configuration shows a strong Bragg's peak corresponding to Ge (400). XRD rocking curve pattern in the vicinity of the Bragg peak for Ge(400) shows a sharp peak with a FWHM of only 512 arc sec, indicating highly-oriented Ge film. XRD phi-scan for (221), (111) and (110) planes of germanium show sharp peaks at 45° interval, proving the in-plane epitaxy of germanium which have a four-fold cubic symmetry. The epitaxial germanium films on silicon are useful for heterogeneous CMOS devices, photonics, IR photodetectors, and low-cost III-V photovoltaics.

Item Type:	Conference Paper
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	Epitaxy; Germanium; heterogeneous; Silicon
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	07 Jun 2022 05:57
Last Modified:	07 Jun 2022 05:57
URI:	https://eprints.iisc.ac.in/id/eprint/73228

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