Study of La-modified antiferroelectric $PbZrO_3$ thin films

Bharadwaja, SSN and Krupanidhi, SB (2003) Study of La-modified antiferroelectric $PbZrO_3$ thin films. In: Thin Solid Films, 423 (1). pp. 88-96.

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Abstract

Dielectric and DC electrical properties of antiferroelectric lead zirconate and La-doped lead zirconate thin films deposited using a pulsed excimer-laser ablation technique were studied in detail. Increased La dopant concentration in pure lead zirconate thin films reduced the dielectric maximum and Curie temperature. At 9 mol.% of La in pure lead zirconate, the dielectric transition temperature reduced to room temperature. A gradual change from antiferroelectric to paraelectric through ferroelectric phases was observed with the addition of La to pure lead zirconate. The DC electrical properties of pure lead zirconate and the effect of donor addition on leakage current properties were studied. Correlation between the macroscopic changes observed in the charge transport mechanisms, microscopic defect chemistry and charge-carrier trapping phenomenon was examined in detail.

Item Type:	Journal Article
Publication:	Thin Solid Films
Publisher:	Elsevier
Additional Information:	Copyright of this article belongs to Elsevier.
Keywords:	Lead zirconate;Electrical properties and measurements;Dielectric properties
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	02 Jun 2006
Last Modified:	19 Sep 2010 04:28
URI:	http://eprints.iisc.ac.in/id/eprint/7317

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