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Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure

Paul, Arup Kumar and Kuiri, Manabendra and Saha, Dipankar and Chakraborty, Biswanath and Mahapatra, Santanu and Sood, AK and Das, Anindya (2017) Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure. In: npj 2D Materials and Applications, 1 (1). ISSN 2397-7132

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Official URL: https://doi.org/10.1038/s41699-017-0017-3


Fabrication of the out-of-plane atomically sharp p–n junction by stacking two dissimilar two-dimensional materials could lead to new and exciting physical phenomena. The control and tunability of the interlayer carrier transport in these p–n junctions have a potential to exhibit new kind of electronic and optoelectronic devices. In this article, we present the fabrication, electrical, and opto-electrical characterization of vertically stacked few-layers MoTe2(p)–single-layer MoS2(n) heterojunction. Over and above the antiambipolar transfer characteristics observed similar to other hetero p–n junction, our experiments reveal a unique feature as a dip in transconductance near the maximum. We further observe that the modulation of the dip in the transconductance depends on the doping concentration of the two-dimensional flakes and also on the power density of the incident light. We also demonstrate high photo-responsivity of ~105 A/W at room temperature for a forward bias of 1.5 V. We explain these new findings based on interlayer recombination rate-dependent semi-classical transport model. We further develop first principles-based atomistic model to explore the charge carrier transport through MoTe2–MoS2 heterojunction. The similar dip is also observed in the transmission spectrum when calculated using density functional theory–non-equilibrium Green’s function formalism. Our findings may pave the way for better understanding of atomically thin interface physics and device applications.

Item Type: Journal Article
Publication: npj 2D Materials and Applications
Publisher: Nature Publishing Group
Additional Information: The Copyright of this article belongs to the Authors
Keywords: Carrier transport; Heterojunctions; Layered semiconductors; Molybdenum compounds; Optoelectronic devices; Transconductance; Atomistic modeling; Doping concentration; Electrical characterization; Semi-classical transport models; Transfer characteristics; Transmission spectrums; Two-dimensional materials; Vertical heterostructure; Density functional theory
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 05 Jun 2022 05:53
Last Modified: 05 Jun 2022 05:53
URI: https://eprints.iisc.ac.in/id/eprint/72962

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