Nanocrystalline CuInSe2 thin films prepared using automatic film applicator

Deepa, KG and Chandrabose, Gauthaman and Jampana, Nagaraju (2017) Nanocrystalline CuInSe2 thin films prepared using automatic film applicator. In: Surfaces and Interfaces, 6 . pp. 81-84. ISSN 24680230

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Abstract

CuInSe2 nanoparticle ink is synthesized using wet-chemical method and film is made using an automatic film applicator. The prepared CuInSe2 thin film is sintered at different temperatures. The as deposited film shows prominent CuInSe2 phase together with Cu2Se phase. When the film is sintered at 300 ºC, Cu2Se phase is suppressed and an increase in the crystallinity is observed. At higher sintering temperature, Cu2Se phase starts reappearing and at 450 ºC the prominent phase changes to Cu2Se. The particle size is varied from ∼ 42 to 66 nm in the as deposited and sintered films. Cu concentration in the films is reduced to get single phase In-rich CuInSe2 films with a band gap of 1.25 eV suitable for solar cells.

Item Type:	Journal Article
Publication:	Surfaces and Interfaces
Publisher:	Elsevier B.V.
Additional Information:	The copyright of this article belongs to the Elsevier B.V.
Keywords:	Band gap; Nanoparticle; Solar cell material; Thin film
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	31 May 2022 05:31
Last Modified:	31 May 2022 05:31
URI:	https://eprints.iisc.ac.in/id/eprint/72899

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