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MoS2/SnO2heterojunction-based self-powered photodetector

Augustine, P and Kumawat, KL and Singh, DK and Krupanidhi, SB and Nanda, KK (2022) MoS2/SnO2heterojunction-based self-powered photodetector. In: Applied Physics Letters, 120 (18).

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Official URL: https://doi.org/10.1063/5.0087652


A heterostructure of MoS2/SnO2 has been fabricated. A SnO2 film was deposited by Sn sputtering followed by oxidation of a Sn film in the ambient. Later, a MoS2 film was deposited on SnO2 by pulsed laser deposition. The built-in electric potential generated at the SnO2/MoS2 interface facilitates self-powered broadband photodetection ranging from the ultraviolet-visible to near-infrared (NIR) wavelength. Under NIR illumination, the device exhibits excellent photoresponse with a responsivity of 0.35 A W-1 and a detectivity of 1.25 × 1011 Jones at 0 V. Moreover, the device shows faster response with rise/fall times as 153/200 ms. The excellent performance of the device is attributed to the high electron transport behavior of SnO2 and a built-in electric field at the interface. © 2022 Author(s).

Item Type: Journal Article
Publication: Applied Physics Letters
Publisher: American Institute of Physics Inc.
Additional Information: The copyright for this article belongs to the American Institute of Physics Inc.
Keywords: Electric fields; Electric potential; Electron transport properties; Infrared devices; Layered semiconductors; Photodetectors; Pulsed laser deposition; Pulsed lasers; Tin, Ambients; Infrared illumination; Near Infrared; Near-infrared; Near-infrared wavelength; Photo detection; Photoresponses; Pulsed-laser deposition; Self-powered; SnO2 films, Molybdenum compounds
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 29 May 2022 06:35
Last Modified: 29 May 2022 06:35
URI: https://eprints.iisc.ac.in/id/eprint/72735

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