Shi, Q and Parsonnet, E and Cheng, X and Fedorova, N and Peng, R-C and Fernandez, A and Qualls, A and Huang, X and Chang, X and Zhang, H and Pesquera, D and Das, S and Nikonov, D and Young, I and Chen, L-Q and Martin, LW and Huang, Y-L and Íñiguez, J and Ramesh, R (2022) The role of lattice dynamics in ferroelectric switching. In: Nature Communications, 13 (1).
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Abstract
Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO3) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO3 films, to large (10�s of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40 reduction of the switching voltage and a consequent ~60 improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching. © 2022, The Author(s).
| Item Type: | Journal Article |
|---|---|
| Publication: | Nature Communications |
| Publisher: | Nature Research |
| Additional Information: | The copyright for this article belongs to nature research |
| Keywords: | article; velocity |
| Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
| Date Deposited: | 06 May 2022 15:44 |
| Last Modified: | 06 May 2022 15:44 |
| URI: | http://eprints.iisc.ac.in/id/eprint/71611 |
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