Complementary Metal Oxide Semiconductor-Compatible Top-Down Fabrication of a Ni/NiO Nanobeam Room Temperature Hydrogen Sensor Device

Urs, KMB and Sahoo, K and Bhat, N and Kamble, V (2022) Complementary Metal Oxide Semiconductor-Compatible Top-Down Fabrication of a Ni/NiO Nanobeam Room Temperature Hydrogen Sensor Device. In: ACS Applied Electronic Materials, 4 (1). pp. 87-91.

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Abstract

Miniaturized chemical sensors are of immense utility for low-power-consuming, on-chip-integrable functional devices. In this letter, complementary metal oxide semiconductor (CMOS)-compatible fabrication of a suspended Ni/NiO nanobeam gas sensor device showing a selective response to hydrogen gas at room temperature is reported. The dimensions of the suspended Ni beam are 100 nm � 1 μm, and the thickness varied from 15 and 20 nm. Further, it is oxidized using either thermal oxidation or plasma oxidation. The selective response obtained is a nearly 50 change in resistance for 5000 ppm of H2 at 25 °C in plasma-oxidized-sputtered Ni films. The joule heating results in thermal oxidation viz-a-viz electromigration of Ni metal self-functionalization and helps in the selective response toward hydrogen. © 2022 American Chemical Society.

Item Type:	Journal Article
Publication:	ACS Applied Electronic Materials
Publisher:	American Chemical Society
Additional Information:	The copyright for this article belongs to American Chemical Society
Keywords:	Chemical sensors; CMOS integrated circuits; Dielectric devices; Electromigration; Fabrication; Hydrogen; Metals; MOS devices; Nanowires; Oxide semiconductors; Thermooxidation; Transistors, Complementary metal-oxide-semiconductor compatible; Hydrogen sensor; Low Power; Nano beams; On-chip devices; Room temperature; Selective response; Sensor device; Thermal-oxidation; Top-down fabrication, Nickel oxide
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	07 Feb 2022 12:21
Last Modified:	11 Sep 2022 06:04
URI:	https://eprints.iisc.ac.in/id/eprint/71284

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