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Hidden electronic phase in strained few-layer 1 T-TaS2

Sruthi, S and Kundu, HK and Vishnubhotla, P and Bid, A (2021) Hidden electronic phase in strained few-layer 1 T-TaS2. In: Physical Review Materials, 5 (12).

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Official URL: https://doi.org/10.1103/PhysRevMaterials.5.124003


Layered van der Waals materials are exciting as they often host multiple, competing electronic phases. This article reports the experimental observation of the coexistence of insulating and metallic phases deep within the commensurate charge density wave phase in high-quality devices of few-layer 1T-TaS2. Through detailed conductance fluctuation spectroscopy of the electronic ground state, we establish that the mixed phase consists of insulating regions surrounded by one-dimensional metallic domain walls. We show that the electronic ground state of 1T-TaS2 can be affected drastically by strain, eventually leading to the collapse of the Mott gap in the commensurate charge density wave phase. Our study resolves an outstanding question, namely the effect of the interlayer coupling strength on the electronic phases in layered van der Waals materials. © 2021 American Physical Society.

Item Type: Journal Article
Publication: Physical Review Materials
Publisher: American Physical Society
Additional Information: The copyright for this article belongs to Author
Keywords: Charge density; Charge density waves; Domain walls; Ground state, Charge-density-wave phasis; Conductance fluctuation; Electronic ground state; Electronic phasis; Fluctuation spectroscopy; High quality; Insulating phase; Layer 1; Metallic phase; Van der Waal, Van der Waals forces
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 27 Jan 2022 11:47
Last Modified: 27 Jan 2022 11:47
URI: http://eprints.iisc.ac.in/id/eprint/71038

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