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Two-Step Process using MOCVD and Thermal Oxidation to Obtain Pure-Phase Cu2O Thin Films Transistors

Singh, V and Sinha, J and Avasthi, S (2021) Two-Step Process using MOCVD and Thermal Oxidation to Obtain Pure-Phase Cu2O Thin Films Transistors. In: ACS Applied Electronic Materials .

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Official URL: https://doi.org/10.1021/acsaelm.1c01050


Unlike most metal oxides, copper oxides (Cu2O and CuO) show p-type conductivity, which is required for many electronic applications. Cu2O has been reported to have relatively high hole mobility (256 cm2 V-1 s-1). Unfortunately, the thin-film deposition of pure Cu2O is not trivial. Pure-phase Cu2O is formed in a narrow pressure-temperature window, only under precise oxygen potential. To obtain pure-phase Cu2O, we have deposited Cu using chemical vapor deposition (CVD) and performed postdeposition oxidation without breaking the vacuum. As Cu2O is very sensitive to oxygen potential, the conditions for oxidation were derived from thermodynamic simulations to obtain pure-phase Cu2O. Hall measurement illustrates a significant Hall mobility of 80.9 cm2 V-1 s-1 for Cu2O. Films are intrinsically p-type doped with a carrier density of 2.3 � 1016 cm-3. To show its device application, thin-film transistors were fabricated on the Cu2O and CuO films, showing typical p-channel accumulation mode transistor characteristics with field-effect mobilities of 4.3 � 10-2 and 2.4 � 10-3 cm2 V-1 s-1, respectively. Overall, material and electrical characterization show that metal-organic CVD along with oxidation is a promising option to achieve pure-phase Cu2O that can be used for electronic applications. © 2021 American Chemical Society.

Item Type: Journal Article
Publication: ACS Applied Electronic Materials
Publisher: American Chemical Society
Additional Information: The copyright for this article belongs to American Chemical Society.
Keywords: Chemical vapor deposition; Field effect transistors; Hall mobility; Hole mobility; Organometallics; Oxygen; Semiconducting films; Thermooxidation; Thin film circuits; Thin film transistors; Thin films, C. thin film transistor (TFT); Electronics applications; Field-effect mobilities; Metal-oxide; Oxygen potential; P type conductivity; Temperature window; Thermal-oxidation; Thin-film depositions; Two-step process, Copper oxides
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 12 Jan 2022 05:50
Last Modified: 12 Jan 2022 05:50
URI: http://eprints.iisc.ac.in/id/eprint/70940

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