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Effect of boron nitride defects and charge inhomogeneity on 1/ f noise in encapsulated graphene

Kumar, C and Das, A (2021) Effect of boron nitride defects and charge inhomogeneity on 1/ f noise in encapsulated graphene. In: Applied Physics Letters, 119 (22).

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Official URL: https://doi.org/10.1063/5.0071152


Low frequency 1 / f noise is investigated in graphene, encapsulated between the hexagonal boron nitride (hBN) substrate in dual gated geometry. The overall noise magnitude is smaller as compared to graphene on the Si/SiO2 substrate. The noise amplitude in the hole doped region is independent of carrier density, while in the electron doped region, a pronounced peak is observed at Fermi energy, E F � 90 meV. The physical mechanism of the anomalous noise peak in the electron doped region is attributed to the impurity states originating from the Carbon atom replacing the nitrogen site in the hBN crystal. Furthermore, the noise study near the Dirac point shows a characteristic "M-shape,"which is found to be strongly correlated with the charge inhomogeneity region near the Dirac point. © 2021 Author(s).

Item Type: Journal Article
Publication: Applied Physics Letters
Publisher: American Institute of Physics Inc.
Additional Information: The copyright for this article belongs to the Author.
Keywords: Boron nitride; Crystal impurities; Graphene; III-V semiconductors; Nitrides, 1/F noise; 1/f-noise; Dirac point; Electron-doped; Inhomogeneities; Low frequency (1/f) noise; Noise amplitude; Noise magnitude; Physical mechanism; Si/SiO2, Semiconductor doping
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 06 Jan 2022 11:39
Last Modified: 06 Jan 2022 11:39
URI: http://eprints.iisc.ac.in/id/eprint/70826

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